On the Conduction Properties of Vertical GaN n-Channel Trench MISFETs
نویسندگان
چکیده
ON-state conductance properties of vertical GaN n -channel trench MISFETs manufactured on different substrates and having gate orientations are studied up to 200 °C ambient temperature. The best performing devices, with a maximum output current above 4 kA/cm 2 an area specific resistance 1.1 m?·cm , ammonothermal substrate the channel parallel a-plane crystal. scalability devices 40 mm periphery is investigated demonstrated. It found that, in addition oxide interface traps, semiconductor border traps p-GaN layer limit available mobile electrons that surface roughness scattering limits mobility. Both strongly depend orientation defect density.
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ژورنال
عنوان ژورنال: IEEE Journal of the Electron Devices Society
سال: 2021
ISSN: ['2168-6734']
DOI: https://doi.org/10.1109/jeds.2021.3056697